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Browsing by Author "Pawlak, Malgorzata"

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    0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

    Menou, Nicolas
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    Wang, Xin Peng
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    Kaczer, Ben  
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    Polspoel, Wouter
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    Popovici, Mihaela Ioana  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632
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    A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

    Popovici, Mihaela Ioana  
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    Tomida, Kazuyuki  
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    Swerts, Johan  
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    Favia, Paola  
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    Delabie, Annelies  
    Journal article
    2011, Physica Status Solidi A, (208) 8, p.1920-1924
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    Advanced capacitor dielectrics: towards 2x nm DRAM

    Kim, Min-Soo  
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    Popovici, Mihaela Ioana  
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    Swerts, Johan  
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    Pawlak, Malgorzata
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    Tomida, Kazuyuki  
    Proceedings paper
    2011-05, 3rd International Memory Workshop - IMW, 22/05/2011, p.42-45
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    ALD strontium titanates and their characterization

    Popovici, Mihaela Ioana  
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    Van Elshocht, Sven  
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    Tomida, Kazuyuki  
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    Menou, Nicolas
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    Swerts, Johan  
    Oral presentation
    2010, International Workshop on Power Supply On Chip
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    Applications of Ni-based silicides to 45 nm CMOS and beyond

    Kittl, Jorge
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    Lauwers, Anne  
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    Chamirian, Oxana
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    Pawlak, Malgorzata
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    Van Dal, Mark  
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    Akheyar, Amal
    Proceedings paper
    2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.31-42
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    Atomic layer deposition of Ru and RuO2 for MIMCAP applications

    Zhao, Chao
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    Pawlak, Malgorzata
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    Popovici, Mihaela Ioana  
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    Schaekers, Marc  
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    Sleeckx, Erik  
    Proceedings paper
    2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.377-387
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    Atomic layer deposition of Ru and RuO2 for MIMCAP applications

    Zhao, Chao
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    Pawlak, Malgorzata
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    Schaekers, Marc  
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    Sleeckx, Erik  
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    Vancoille, Eric  
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    Wouters, Dirk
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.2052
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    Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes

    Menou, Nicolas
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    Popovici, Mihaela Ioana  
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    Clima, Sergiu  
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    Opsomer, Karl  
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    Polspoel, Wouter
    Journal article
    2009, Journal of Applied Physics, (106) 9, p.94101
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    Compositional study of BaSrTiO thin films for memory application

    Tomida, Kazuyuki  
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    Opsomer, Karl  
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    Vrancken, Christa  
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    Matero, Raija
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    Tois, Eva
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    Kaczer, Ben  
    Proceedings paper
    2010, 41st IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010
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    Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium

    Popovici, Mihaela Ioana  
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    Swerts, Johan  
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    Tomida, Kazuyuki  
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    Radisic, Dunja  
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    Kim, Min-Soo  
    Journal article
    2011, Physica Status Solidi. Rapid Research Letters, (5) 1, p.19-21
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    Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)

    Lauwers, Anne  
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    Veloso, Anabela  
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    Chang, Shou-Zen
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    Yu, HongYu
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    Hoffmann, Thomas Y.
    Journal article
    2008, IEEE Electron Device Letters, (29) 1, p.34-37
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    Crystallization study of thin ZrO2 ALD films on Al203 and on TiN for DRAM MIMCAP applications

    Pawlak, Malgorzata
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    Menou, Nicolas
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    Wang, Xin Peng
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    Dilliway, G.
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    Pierreux, D.
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    Fischer, P.
    Oral presentation
    2008, MRS Spring Meeting Symposium H: Materials Science of High-k Dielectric Stacks
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    Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

    Pawlak, Malgorzata
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    Swerts, Johan  
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    Popovici, Mihaela Ioana  
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    Kaczer, Ben  
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    Kim, Min-Soo  
    Journal article
    2012, Applied Physics Letters, (101) 4, p.42901
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    Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications

    Dilliway, G.
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    Pierreux, D.
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    Fischer, P.
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    Menou, Nicolas
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    Pawlak, Malgorzata
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    Wang, Xin Peng
    Proceedings paper
    2008, 8th International Conference on Atomic Layer Deposition - ALD, 29/06/2008
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    Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering

    Pawlak, Malgorzata
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    Popovici, Mihaela Ioana  
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    Swerts, Johan  
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    Tomida, Kazuyuki  
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    Kim, Min-Soo  
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.277-280
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    High-k dielectrics and metal gates for future generation memory devices

    Kittl, Jorge
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    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
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    Kaczer, Ben  
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    Wang, Xin Peng
    Meeting abstract
    2009, 215th ECS Meeting, 24/05/2009, p.690
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    High-k dielectrics and metal gates for future generation memory devices

    Kittl, Jorge
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    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
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    Kaczer, Ben  
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    Wang, Xin Peng
    Proceedings paper
    2009, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS. 5: New Materials, Processing, and Equipment, 24/05/2009, p.29-40
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    High-k dielectrics for future generation memory devices

    Kittl, Jorge
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    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
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    Kaczer, Ben  
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    Wang, Xin Peng
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1789-1795
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    Higher-k ALD Sr-rich SrTiO3 for DRAM MIMCAP Application

    Tomida, Kazuyuki  
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    Swerts, Johan  
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    Popovici, Mihaela Ioana  
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    Kaczer, Ben  
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    Clima, Sergiu  
    Meeting abstract
    2013, 2013 NIMS Cconference, 1/07/2013, p.OS4-12
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    Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

    Pawlak, Malgorzata
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    Kaczer, Ben  
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    Kim, Min-Soo  
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    Popovici, Mihaela Ioana  
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    Tomida, Kazuyuki  
    Journal article
    2010, Applied Physics Letters, (97) 16, p.162906
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