Browsing by Author "Togo, Mitsuhiro"

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Atom probe tomography for 3D-dopant analysis in FinFET devices

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

Charge based compact modeling for bulk FinFETs

Charge based DC compact modeling of bulk FinFET transistor

Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density

Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel

Electrode process dependent NBTI chracteristics of TiN gate FinFETs

Heated implantation with amorphous carbon CMOS mask for scaled FinFETs

Heated implantation with amorphous carbon CMOS mask for scaled FinFETs

High performance n-mos FinFET by damage-free, conformal extension doping

Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

Impact of the substrate orientation on CHC reliability in n-FinFETs – separation of the various contributions

Impact of through silicon via induced mechanical stress on fully depleted bulk FinFET technology

Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs

Ion-implantation-based low-cost Hk/MG process for CMOS low-power application

Junction strategies for 1x nm technology node with FINFET and high mobility channel

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs

Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation