Browsing by Author "Yu, HongYu"

Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Advanced CMOS device technologies for 45nm node and below

Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices

ALD La-based oxides for Vt-tuning in high-k/metal gate stacks

ALD La2O3 cap layers on high-k gates to modify the metal gate work function

Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping

Challenges with respect to high-k/metal gate stack etching and cleaning

CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)

Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON

Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications

Deposition of Poly-SiGe with RTCVD

DyScHfO as high-k gate dielectric: structural and electrical properties

Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)

Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications