Browsing by Author "Kauerauf, Thomas"

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond

A new TDDB reliability prediction methodology accounting for multiple SBD and wear out

A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics

Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?

Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability

Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions

BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities

Channel hot carrier degradation mechanism in long/short channel n-FinFETs

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Channel hot-Carrier degradation in short channel devices with high-k/metal gate stacks

Channel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks

Channel hot-carrier degradation under static stress in short channel transistors with high-k/metal gate stacks