Browsing by Author "Kittl, Jorge"
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Publication 0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632Publication 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.729-732Publication A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Journal article2011, Physica Status Solidi A, (208) 8, p.1920-1924Publication A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.261-266Publication A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
Journal article2012, Applied Physics Letters, (100) 4, p.43507Publication Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199Publication Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Proceedings paper2007-09, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007Publication Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Journal article2008, Solid-State Electronics, (52) 9, p.1303-1311Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Advanced capacitor dielectrics: towards 2x nm DRAM
Proceedings paper2011-05, 3rd International Memory Workshop - IMW, 22/05/2011, p.42-45Publication ALD strontium titanates and their characterization
Oral presentation2010, International Workshop on Power Supply On ChipPublication Alternative high-k dielectrics for semiconductor applications
Journal article2009, Journal of Vacuum Science and Technology B, (27) 1, p.209-213Publication Alternative high-k dielectrics for semiconductor applications
Oral presentation2008, 15th Workshop on Dielectrics in Microelectronics - WODIMPublication Applications of Ni-based silicides to 45 nm CMOS and beyond
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.31-42Publication Atomic layer deposition of gadolinium aluminate layers using Gd(iPrCp)3, TMA, and O3 or H2O
Journal article2010, Chemical Vapor Deposition, (16) 4_6, p.170-178Publication Atomic layer deposition of Gd-doped HfO2 thin films
Journal article2010, Journal of the Electrochemical Society, (157) 4, p.G105-G110Publication Atomic layer deposition of GdHfOx thin films
Proceedings paper2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.243-251Publication Atomic layer deposition of hafnium titanates dielectric layers
Proceedings paper2008, 8th International Conference on Atomic Layer Deposition - ALD, 29/06/2008Publication Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2052Publication Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Proceedings paper2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.377-387