Browsing by Author "Lehnen, Peer"

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Alternative high-k dielectrics for semiconductor applications

Alternative high-k dielectrics for semiconductor applications

Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping

AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics

Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films

DyScHfO as high-k gate dielectric: structural and electrical properties

Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric

Equivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions

Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface

Growth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition

Improving CMOS performance by AVD® grown high-k dielectrics and advanced metal electrodes

Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs

Nitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate