Browsing by author "Dhayalan, Sathish Kumar"
Now showing items 1-20 of 25
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Advanced low temperature epitaxy of high mobility materials
Dhayalan, Sathish Kumar (2017-07) -
C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy
Dhayalan, Sathish Kumar; Nuytten, Thomas; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Vandervorst, Wilfried (2015-05) -
Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy
Simoen, Eddy; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Vrielinck, Henk; Lauwaert, Johan (2017) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Chemical vapour deposition of Si:C and Si:C:P films – evaluation of material quality as a function of C content, carrier gas and doping
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried (2015) -
Chemical vapour deposition of Si:C and Si:CP thin films using disilane
Dhayalan, Sathish Kumar; Rosseel, Erik; Hikavyy, Andriy; Loo, Roger; Vandervorst, Wilfried (2013-10) -
Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique
Dhayalan, Sathish Kumar; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Nuytten, Thomas; Douhard, Bastien; Vandervorst, Wilfried (2014) -
Enabling GeH4-HCl in-situ pre-epi clean: impact of water quality on HF last process performance
Wostyn, Kurt; Rondas, Dirk; Loo, Roger; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Elskens, Wim; Vyncke, Alex; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; Masaoka, Toru; Yoshida, Yukifumi; Bast, Gerhard; Simpson, Gavin (2015) -
Group IV Epi processing, evolution in CMOS from 90 to 10nm node
Loo, Roger; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Ike, Shinichi; Rondas, Dirk; Rosseel, Erik; Shimura, Yosuke; Steenbergen, Johnny; Sun, Jianwu; Wang, Wei; Langer, Robert (2014) -
HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth
Wostyn, Kurt; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Douhard, Bastien; Moussa, Alain; Rondas, Dirk; Kenis, Karine; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; Profijt, Harald (2014) -
High Ge content SiGe thin films: growth, properties and integration
Hikavyy, Andriy; Rosseel, Erik; Dhayalan, Sathish Kumar; Witters, Liesbeth; Mertens, Hans; Bender, Hugo; Favia, Paola; Loo, Roger (2014) -
Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers
Dhayalan, Sathish Kumar; Nuytten, Thomas; Pourtois, Geoffrey; Simoen, Eddy; Pezzoli, Fabio; Bonera, Emiliano; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Vandervorst, Wilfried (2019) -
Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD
Dhayalan, Sathish Kumar; Nuytten, Thomas; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Vandervorst, Wilfried (2017-11) -
Low temperature pre-epi Treatment: critical parameters to control interface contamination
Hikavyy, Andriy; Loo, Roger; Dhayalan, Sathish Kumar; Wostyn, Kurt; Rosseel, Erik; Simoen, Eddy; Machkaoutsan, Vladimir; Profijt, Harald; Tolle, John (2013) -
Low-temperature pre-epitaxy surface cleaning of Si and SiGe
Profijt, Harald; Suhard, Samuel; Rosseel, Erik; Tolle, John; Mertens, Hans; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Weeks, Doran; Holsteyns, Frank; Loo, Roger; Mehta, Sandeep; Maes, Jan (2015-05) -
Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine
Dhayalan, Sathish Kumar; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Nuytten, Thomas; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Vandervorst, Wilfried (2014) -
Material studies on Si:C epitaxial films grown by CVD
Dhayalan, Sathish Kumar; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Nuytten, Thomas; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Vandervorst, Wilfried (2014-10) -
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications
Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Loo, Roger; Vandervorst, Wilfried (2018-04)