Browsing by author "Sprey, Hessel"
Now showing items 1-20 of 35
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A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film
Travaly, Youssef; Tsutsue, M.; Ikeda, Atsushi; Verdonck, Patrick; Tokei, Zsolt; Willegems, Myriam; Van Aelst, Joke; Struyf, Herbert; Vereecke, Guy; Kesters, Els; Le, Quoc Toan; Claes, Martine; Heylen, Nancy; Sinapi, Fabrice; Richard, Olivier; De Roest, David; Kaneko, S; Kemeling, N; Fukazawa, A; Matsuki, N; Matsushita, K; Tsuji, N; Kagami, K; Sprey, Hessel; Beyer, Gerald (2007) -
A new HF vapor native oxide removal process for cluster applications
Sprey, Hessel; Storm, Arjen; Maes, Jan; Granneman, E. H. A.; Hendriks, Marton; Röhr, Erika; Caymax, Matty; Decoutere, Stefaan; Heyns, Marc (1998) -
A new HF vapor process for native oxide removal, suited for cluster applications
Storm, Arjen; Sprey, Hessel; Maes, Jan; Granneman, E.; De Blank, Rene; Röhr, Erika; Caymax, Matty; Heyns, Marc (1999) -
Characterization and optimization of porogen based PECVD deposited extreme low-k materials as a function of UV-cure time
Verdonck, Patrick; De Roest, David; Kaneko, Shinya; Caluwaerts, Rudy; Tsuji, Naoto; Matsushita, Kiyohiro; Kemeling, Nathan; Travaly, Youssef; Sprey, Hessel; Schaekers, Marc; Beyer, Gerald (2007) -
Characterization of PVD TaN and ALD WNxCy copper diffusion barriers on a porous CVD low-k material
Travaly, Youssef; Kemeling, N.; Maenhoudt, Mireille; Peeters, S.; Tokei, Zsolt; Abell, Thomas; Schuhmacher, Jörg; Turturro, S.; Vos, Ingrid; Eugene, Lino; Matsuki, N.; Fukazawa, A.; Goundar, K.; Satoh, K.; Kato, M.; Kaneko, S.; Vertommen, Johan; Sprey, Hessel; Van Hove, Marleen; Jonas, A.; Maex, Karen (2004) -
Characterization of TiN films deposited by atomic layer deposition
Besling, W.F.A.; Satta, Alessandra; Schuhmacher, Jörg; Beyer, Gerald; Maex, Karen; Kilpela, Olli; Sprey, Hessel (2002) -
Chlorine precursors for gate oxidation processes
Mc Geary, M. J.; Mertens, Paul; Vermeire, Bert; Heyns, Marc; Sprey, Hessel; Lubbers, A.; Schaekers, Marc (1997) -
Critical processes for ultra-thin gate oxide integrity
Depas, Michel; Heyns, Marc; Nigam, Tanya; Kenis, Karine; Sprey, Hessel; Wilhelm, H.; Wilhelm, Rudi; Crossley, A.; Sofield, C. J.; Gräf, D. (1996) -
Deposition and characterization of porogen based PECVD deposited and UV-cured extreme low-k materials
Verdonck, Patrick; De Roest, David; Kaneko, Shinya; Tsuji, Naoto; Matsushita, Kiyohiro; Travaly, Youssef; Sprey, Hessel; Schaekers, Marc; Beyer, Gerald (2007) -
Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects
Beyer, Gerald; Satta, Alessandra; Schuhmacher, Jörg; Maex, Karen; Besling, Wim; Kilpela, Olli; Sprey, Hessel; Tempel, Georg (2002) -
Dielectric reliability of 50nm half pitch structures in Aurora® LK
Demuynck, Steven; Kim, Honggun; Huffman, Craig; Darnon, Maxime; Struyf, Herbert; Versluijs, Janko; Claes, Martine; Vereecke, Guy; Verdonck, Patrick; Volders, Henny; Heylen, Nancy; Kellens, Kristof; De Roest, David; Sprey, Hessel; Beyer, Gerald (2009) -
Effect of Cl in gate oxidation
Mertens, Paul; McGeary, M. J.; Schaekers, Marc; Sprey, Hessel; Vermeire, Bert; Depas, Michel; Meuris, Marc; Heyns, Marc (1997) -
Effect of Cl in gate oxidation
Mertens, Paul; McGeary, M. J.; Schaekers, Marc; Sprey, Hessel; Vermeire, Bert; Depas, Michel; Meuris, Marc; Heyns, Marc (1997) -
Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance
Marsik, Premysl; Urbanowicz, Adam; Verdonck, Patrick; De Roest, David; Sprey, Hessel; Baklanov, Mikhaïl (2011) -
Electrical evaluation of the EPI/substrate interface quality after different in-situ and ex-situ low-temperature pre-epi cleaning methods
Caymax, Matty; Decoutere, Stefaan; Röhr, Erika; Vandervorst, Wilfried; Heyns, Marc; Sprey, Hessel; Storm, Arjen; Maes, J.W. (1998) -
Electrical evaluation of the EPI/substrate interface quality after different in-situ and ex-situ low-temperature pre-epi cleaning methods
Caymax, Matty; Decoutere, Stefaan; Röhr, Erika; Vandervorst, Wilfried; Heyns, Marc; Sprey, Hessel; Storm, Arjen; Maes, J. (1999) -
Highly reliable Cu/ULK integratrion scheme using MHM and low-k capping film
Tsutsue, Makoto; Travaly, Youssef; Ikeda, Atsushi; Tokei, Zsolt; Willegems, Myriam; Struyf, Herbert; Sinapi, Fabrice; Richard, Olivier; Kemeling, Nathan; De Roest, David; Fukuzawa, A.; Matsuki, N.; Sprey, Hessel; Beyer, Gerald (2007) -
Impact of ALCVD and PVD titanium nitride deposition on metal gate capacitors
Lujan, Guilherme; Schram, Tom; Pantisano, Luigi; Hooker, Jacob; Kubicek, Stefan; Röhr, Erika; Schuhmacher, Jörg; Kilpela, Olli; Sprey, Hessel; De Gendt, Stefan; De Meyer, Kristin (2002) -
Improved low-k dielectric properties using He/H2 plasma for resist removal
Urbanowicz, Adam; Shamiryan, Denis; Marsik, Premysl; Travaly, Youssef; Verdonck, Patrick; Vanstreels, Kris; Ferchichi, Abdelkarim; De Roest, David; Sprey, Hessel; Matsushita, K.; Kaneko, S.; Tsuji, N.; Luo, S.; Escorcia, O.; Berry, Ivan; Waldfried, Carlo; De Gendt, Stefan; Baklanov, Mikhaïl (2008) -
Improved low-k dielectric properties using He/H2 plasma for resist removal
Urbanowicz, Adam; Shamiryan, Denis; Marsik, Premysl; Travaly, Youssef; Jonas, Alain; Verdonck, Patrick; Vanstreels, Kris; Ferchichi, Abdelkarim; De Roest, David; Sprey, Hessel; Matsushita, Kiyohiro; Kaneko, Shinya; Tsuji, Naoto; Luo, Shijian; Escorcia, Orlando; Berry, Ivan; Waldfried, Carlo; De Gendt, Stefan; Baklanov, Mikhaïl (2009)